HOME > 論文 > 書誌詳細Gate-Controlled P–I–N Junction Switching Device with Graphene Nanoribbon(Gate-Controlled P–I–N Junction Switching Device with Graphene Nanoribbon)Shu Nakaharai, Tomohiko Iijima, Shinichi Ogawa, Hisao Miyazaki, Songlin Li, Kazuhito Tsukagoshi, Shintaro Sato, Naoki Yokoyama. Applied Physics Express 5 [1] 015101. 2012.https://doi.org/10.1143/apex.5.015101 NIMS著者塚越 一仁Materials Data Repository (MDR)上の本文・データセット作成時刻: 2016-05-24 16:32:59 +0900更新時刻: 2024-11-07 06:32:41 +0900