Pressure-induced change in the electronic structure of epitaxially strainedLa1−xSrxMnO3thin films

K. Horiba; A. Maniwa; A. Chikamatsu; K. Yoshimatsu; H. Kumigashira; H. Wadati; A. Fujimori; S. Ueda; H. Yoshikawa; E. Ikenaga; J. J. Kim; K. Kobayashi; M. Oshima

doi:10.1103/physrevb.80.132406

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Pressure-induced change in the electronic structure of epitaxially strainedLa1−xSrxMnO3thin films
(Pressure-induced change in the electronic structure of epitaxially strainedLa1−xSrxMnO3thin films)

K. Horiba, A. Maniwa, A. Chikamatsu, K. Yoshimatsu, H. Kumigashira, H. Wadati, A. Fujimori, S. Ueda, H. Yoshikawa, E. Ikenaga, J. J. Kim, K. Kobayashi, M. Oshima.

Physical Review B 80 [13] 132406. 2009.

https://doi.org/10.1103/physrevb.80.132406

NIMS著者

Materials Data Repository (MDR)上の本文・データセット

作成時刻: 2016-05-24 15:52:41 +0900更新時刻: 2024-12-08 08:37:08 +0900

Pressure-induced change in the electronic structure of epitaxially strainedLa1−xSrxMnO3thin films(Pressure-induced change in the electronic structure of epitaxially strainedLa1−xSrxMnO3thin films)

NIMS著者

Materials Data Repository (MDR)上の本文・データセット

Pressure-induced change in the electronic structure of epitaxially strainedLa1−xSrxMnO3thin films
(Pressure-induced change in the electronic structure of epitaxially strainedLa1−xSrxMnO3thin films)