HOME > Article > DetailRealization of high quality epitaxial current- perpendicular-to-plane giant magnetoresistive pseudo spin-valves on Si(001) wafer using NiAl buffer layer(NiAl下地層によるSi(001)基板上高品位エピタキシャルGMR素子の実現)Jiamin Chen, J. Liu, Y. Sakuraba, H. Sukegawa, S. Li, K. Hono. APL Materials 4 [5] 056104. 2016.https://doi.org/10.1063/1.4950827 Open Access AIP Publishing (Publisher) NIMS author(s)CHEN, JiaminSAKURABA, YuyaSUKEGAWA, HiroakiHONO, KazuhiroFulltext and dataset(s) on Materials Data Repository (MDR)Created at: 2016-10-26 15:42:32 +0900Updated at: 2024-03-29 21:35:47 +0900