HOME > 論文 > 書誌詳細m -Plane GaN Schottky Barrier Diodes Fabricated With MOVPE Layer on Several Off-Angle m -Plane GaN SubstratesAtsushi Tanaka, Yuto Ando, Kentaro Nagamatsu, Manato Deki, Heajeong Cheong, Barry Ousmane, Maki Kushimoto, Shugo Nitta, Yoshio Honda, Hiroshi Amano. physica status solidi (a) 215 [9] 1700645. 2018.https://doi.org/10.1002/pssa.201700645 NIMS著者Materials Data Repository (MDR)上の本文・データセット作成時刻: 2021-06-10 03:00:18 +0900 更新時刻: 2025-04-12 07:03:04 +0900
