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m -Plane GaN Schottky Barrier Diodes Fabricated With MOVPE Layer on Several Off-Angle m -Plane GaN Substrates

Atsushi Tanaka, Yuto Ando, Kentaro Nagamatsu, Manato Deki, Heajeong Cheong, Barry Ousmane, Maki Kushimoto, Shugo Nitta, Yoshio Honda, Hiroshi Amano.
physica status solidi (a) 215 [9] 1700645. 2018.
https://doi.org/10.1002/pssa.201700645

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