HOME > Article > DetailMicrocrystal Growth of GaAs on a Se-Terminated GaAlAs Surface for the Quantum-Well Box Structure by Sequential Supplies of Ga an(Se終端処理を施したGaAlAs基板上でのGaおよびAs分子線連続照射による、量子箱作製を目指したGaAs微結晶の成長.)Toyohiro Chikyow, Nobuyuki Koguchi. Applied Physics Letters 61 [20] 2431-2433. 1992.https://doi.org/10.1063/1.108187 NIMS author(s)CHIKYO, ToyohiroFulltext and dataset(s) on Materials Data Repository (MDR)Created at: 2016-05-24 11:34:16 +0900Updated at: 2024-04-01 20:39:29 +0900