InAs/GaAs(110)ヘテロ界面におけるミスフィット転位形成と成長モードの関係
(Relation between the generation of misfit dislocations at InAs/GaAs(110) heterointerface and the growth mode)
NIMS author(s)
Fulltext and dataset(s) on Materials Data Repository (MDR)
Created at: 2022-09-05 11:01:07 +0900 Updated at: 2022-09-05 11:01:07 +0900