HOME > 論文 > 書誌詳細Hole-Doping to a Cu(I)-Based Semiconductor with an Isovalent Cation: Utilizing a Complex Defect as a Shallow AcceptorKosuke Matsuzaki, Naoki Tsunoda, Yu Kumagai, Yalun Tang, Kenji Nomura, Fumiyasu Oba, Hideo Hosono. Journal of the American Chemical Society 144 [36] 16572-16578. 2022.https://doi.org/10.1021/jacs.2c06283 NIMS著者細野 秀雄Materials Data Repository (MDR)上の本文・データセット作成時刻: 2022-09-21 03:18:37 +0900 更新時刻: 2026-10-08 07:04:46 +0900
