HOME > 論文 > 書誌詳細Etched graphene single electron transistors on hexagonal boron nitride in high magnetic fieldsA. Epping, S. Engels, C. Volk, K. Watanabe, T. Taniguchi, S. Trellenkamp, C. Stampfer. physica status solidi (b) 250 [12] 2692-2696. 2013.https://doi.org/10.1002/pssb.201300295 NIMS著者Materials Data Repository (MDR)上の本文・データセット作成時刻: 2016-05-24 17:13:10 +0900更新時刻: 2024-03-31 14:21:20 +0900