HOME > Article > DetailEtched graphene single electron transistors on hexagonal boron nitride in high magnetic fieldsA. Epping, S. Engels, C. Volk, K. Watanabe, T. Taniguchi, S. Trellenkamp, C. Stampfer. physica status solidi (b) 250 [12] 2692-2696. 2013.https://doi.org/10.1002/pssb.201300295 NIMS author(s)Fulltext and dataset(s) on Materials Data Repository (MDR)Created at: 2016-05-24 17:13:10 +0900Updated at: 2024-03-31 14:21:20 +0900
