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Oxygen vacancy drift controlled three-terminal ReRAM with a reduction in operating gate bias and gate leakage current

Qi Wang, Yaomi Itoh, Tohru Tsuruoka, Masakazu Aono, Deyan He, Tsuyoshi Hasegawa.
Solid State Ionics 328 30-34. 2018.
Open Access Elsevier BV (Publisher)


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    作成時刻: 2019-03-01 12:05:17 +0900更新時刻: 2024-03-31 01:19:57 +0900