HOME > 論文 > 書誌詳細Oxygen vacancy drift controlled three-terminal ReRAM with a reduction in operating gate bias and gate leakage currentQi Wang, Yaomi Itoh, Tohru Tsuruoka, Masakazu Aono, Deyan He, Tsuyoshi Hasegawa. Solid State Ionics 328 30-34. 2018.https://doi.org/10.1016/j.ssi.2018.11.004 NIMS著者鶴岡 徹青野 正和Materials Data Repository (MDR)上の本文・データセット作成時刻: 2019-03-01 12:05:17 +0900 更新時刻: 2026-09-29 05:23:41 +0900
