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Oxygen vacancy drift controlled three-terminal ReRAM with a reduction in operating gate bias and gate leakage current

著者Qi Wang, Yaomi Itoh, Tohru Tsuruoka, Masakazu Aono, Deyan He, Tsuyoshi Hasegawa.
掲載誌名Solid State Ionics 328 30-34
ISSN: 01672738
ESIでのカテゴリ: PHYSICS
出版社Elsevier BV
発表年2018
言語English
DOIhttps://doi.org/10.1016/j.ssi.2018.11.004
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