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Oxygen vacancy drift controlled three-terminal ReRAM with a reduction in operating gate bias and gate leakage current

Qi Wang, Yaomi Itoh, Tohru Tsuruoka, Masakazu Aono, Deyan He, Tsuyoshi Hasegawa.
Solid State Ionics 328 30-34. 2018.

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    Created at :2019-03-01 12:05:17 +0900 Updated at :2020-11-16 22:08:22 +0900

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