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Oxygen vacancy drift controlled three-terminal ReRAM with a reduction in operating gate bias and gate leakage current

Qi Wang, Yaomi Itoh, Tohru Tsuruoka, Masakazu Aono, Deyan He, Tsuyoshi Hasegawa.
Solid State Ionics 328 30-34. 2018.
https://doi.org/10.1016/j.ssi.2018.11.004

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