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著者名Takeyasu Saito, Kyung-ho Park, Kazuyuki Hirama, Hitoshi Umezawa, Mitsuya Satoh, Hiroshi Kawarada, Zhi-Quan Liu, Kazutaka Mitsuishi, Kazuo Furuya, Hideyo Okushi.
タイトルFabrication of Metal–Oxide–Diamond Field-Effect Transistors with Submicron-Sized Gate Length on Boron-Doped (111) H-Terminated Surfaces Using Electron Beam Evaporated SiO2 and Al2O3
掲載誌名Journal of Electronic Materials 40 3 247 252
ISSN: 03615235 1543186X
発表年2011
言語English
DOI10.1007/s11664-010-1500-1
ESIでのカテゴリMATERIALS SCIENCE
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