Fabrication of Metal–Oxide–Diamond Field-Effect Transistors with Submicron-Sized Gate Length on Boron-Doped (111) H-Terminated Surfaces Using Electron Beam Evaporated SiO2 and Al2O3

Takeyasu Saito; Kyung-ho Park; Kazuyuki Hirama; Hitoshi Umezawa; Mitsuya Satoh; Hiroshi Kawarada; Zhi-Quan Liu; Kazutaka Mitsuishi; Kazuo Furuya; Hideyo Okushi; Takeyasu Saito; Kyung-ho Park; Kazuyuki Hirama; Hitoshi Umezawa; Mitsuya Satoh; Hiroshi Kawarada; Zhi-Quan Liu; Kazutaka Mitsuishi; Kazuo Furuya; Hideyo Okushi

doi:10.1007/s11664-010-1500-1

Fabrication of Metal–Oxide–Diamond Field-Effect Transistors with Submicron-Sized Gate Length on Boron-Doped (111) H-Terminated Surfaces Using Electron Beam Evaporated SiO2 and Al2O3

Takeyasu Saito, Kyung-ho Park, Kazuyuki Hirama, Hitoshi Umezawa, Mitsuya Satoh, Hiroshi Kawarada, Zhi-Quan Liu, Kazutaka Mitsuishi, Kazuo Furuya, Hideyo Okushi.

Journal of Electronic Materials 40 [3] 247-252. 2011.

https://doi.org/10.1007/s11664-010-1500-1

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Created at: 2016-05-24 16:34:13 +0900Updated at: 2024-04-02 03:09:25 +0900