Depth-resolved electronic structure measurements by hard X-ray photoemission combined with X-ray total reflection: Direct probing of surface band bending of polar GaN | 研究者総覧SAMURAI - 物質・材料研究機構 (NIMS)

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Depth-resolved electronic structure measurements by hard X-ray photoemission combined with X-ray total reflection: Direct probing of surface band bending of polar GaN

Shigenori Ueda.

Applied Physics Express 11 [10] 105701. 2018.

https://doi.org/10.7567/apex.11.105701

NIMS著者

上田茂典

Materials Data Repository (MDR)上の本文・データセット

作成時刻: 2018-09-05 15:22:47 +0900更新時刻: 2024-11-11 04:39:54 +0900

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