HOME > 論文 > 書誌詳細Ion-implantation induced defects in ZnO studied by a slow positron beamZ.Q. Chen, M. Maekawa, SEKIGUCHI, Takashi, R. Suzuki, A. Kawasuso. MATERIALS SCIENCE FORUM 445 [446] 57-59. 2004.NIMS著者Materials Data Repository (MDR)上の本文・データセット作成時刻: 2016-05-24 12:03:30 +0900更新時刻: 2018-12-15 00:47:35 +0900
