HOME > Article > DetailCarrier confinement observed at modulation-doped β-(Al x Ga1− x )2O3/Ga2O3 heterojunction interfaceTakayoshi Oshima, Yuji Kato, Naoto Kawano, Akito Kuramata, Shigenobu Yamakoshi, Shizuo Fujita, Toshiyuki Oishi, Makoto Kasu. Applied Physics Express 10 [3] 035701. 2017.https://doi.org/10.7567/apex.10.035701 NIMS author(s)OSHIMA, TakayoshiFulltext and dataset(s) on Materials Data Repository (MDR)Created at: 2021-11-12 11:25:13 +0900 Updated at: 2026-10-08 04:20:53 +0900