Dual Metal/High-k Gate-Last Complementary Metal–Oxide–Semiconductor Field-Effect Transistor with SiBN Film and Characteristic Behavior In Sub-1-nm Equivalent Oxide Thickness | 研究者総覧SAMURAI - 物質・材料研究機構 (NIMS)

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Dual Metal/High-k Gate-Last Complementary Metal–Oxide–Semiconductor Field-Effect Transistor with SiBN Film and Characteristic Behavior In Sub-1-nm Equivalent Oxide Thickness

Yoshiaki Kikuchi, Hitoshi Wakabayashi, Masanori Tsukamoto, Naoki Nagashima.

Japanese Journal of Applied Physics 50 [8R] 084201. 2011.

https://doi.org/10.1143/jjap.50.084201

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作成時刻: 2026-09-01 18:18:51 +0900 更新時刻: 2026-11-04 07:11:46 +0900

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