Highly stable and isomorphic donor–acceptor stacking in a family of n-type organic semiconductors of BTBT–TCNQ derivatives

Satoshi Matsuoka; Kazuma Ogawa; Ryota Ono; Kiyoshi Nikaido; Satoru Inoue; Toshiki Higashino; Mutsuo Tanaka; Jun'ya Tsutsumi; Ryusuke Kondo; Reiji Kumai; Seiji Tsuzuki; Shunto Arai; Tatsuo Hasegawa; Satoshi Matsuoka; Kazuma Ogawa; Ryota Ono; Kiyoshi Nikaido; Satoru Inoue; Toshiki Higashino; Mutsuo Tanaka; Jun'ya Tsutsumi; Ryusuke Kondo; Reiji Kumai; Seiji Tsuzuki; Shunto Arai; Tatsuo Hasegawa

doi:10.1039/d2tc03634g

Highly stable and isomorphic donor–acceptor stacking in a family of n-type organic semiconductors of BTBT–TCNQ derivatives

Satoshi Matsuoka, Kazuma Ogawa, Ryota Ono, Kiyoshi Nikaido, Satoru Inoue, Toshiki Higashino, Mutsuo Tanaka, Jun'ya Tsutsumi, Ryusuke Kondo, Reiji Kumai, Seiji Tsuzuki, Shunto Arai, Tatsuo Hasegawa.

Journal of Materials Chemistry C 10 [43] 16471-16479. 2022.

https://doi.org/10.1039/d2tc03634g

NIMS author(s)

ARAI, Shunto

Fulltext and dataset(s) on Materials Data Repository (MDR)

Created at: 2022-11-29 11:19:19 +0900Updated at: 2025-02-17 07:01:11 +0900