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Annealing properties of open volumes in HfSiOx and HfAlOx gate dielectrics studied using monoenergetic positron beams

A. Uedono, K. Ikeuchi, K. Yamabe, T. Ohdaira, M. Muramatsu, R. Suzuki, A. S. Hamid, T. Chikyow, K. Torii, K. Yamada.
Journal of Applied Physics 98 [2] 023506. 2005.
https://doi.org/10.1063/1.1977194

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