HOME > 論文 > 書誌詳細Annealing properties of open volumes in HfSiOx and HfAlOx gate dielectrics studied using monoenergetic positron beams A. Uedono, K. Ikeuchi, K. Yamabe, T. Ohdaira, M. Muramatsu, R. Suzuki, A. S. Hamid, T. Chikyow, K. Torii, K. Yamada. Journal of Applied Physics 98 [2] 023506. 2005.https://doi.org/10.1063/1.1977194 NIMS著者知京 豊裕Materials Data Repository (MDR)上の本文・データセット作成時刻: 2016-05-24 14:54:49 +0900更新時刻: 2024-04-01 20:57:14 +0900
