HOME > 論文 > 書誌詳細Nanoscale Origin of Strong Charge Carrier Scattering at Grain Boundaries in Orthorhombic SnSe Semiconductor Thin FilmsXinyi He, Kenji Matsuo, Takayoshi Katase, Kota Hanzawa, Hideto Yoshida, Shigenori Ueda, Hidenori Hiramatsu, Hideo Hosono, Toshio Kamiya. ACS Applied Nano Materials 8 [16] 8167-8175. 2025.https://doi.org/10.1021/acsanm.5c00686 Open Access Materials Data Repository (MDR) NIMS著者上田 茂典細野 秀雄Materials Data Repository (MDR)上の本文・データセットMDRavailable Nanoscale Origin of Strong Charge Carrier Scattering at Grain Boundaries in Orthorhombic SnSe Semiconductor Thin Films 作成時刻: 2025-05-15 03:06:40 +0900 更新時刻: 2026-10-01 06:25:09 +0900
