Origin of recombination activity of non-coherent Σ3{111} grain boundaries with a positive deviation in the tilt angle in cast-grown silicon ingots | 研究者総覧SAMURAI - 物質・材料研究機構 (NIMS)

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Origin of recombination activity of non-coherent Σ3{111} grain boundaries with a positive deviation in the tilt angle in cast-grown silicon ingots

Yutaka Ohno, Takehiro Tamaoka, Hideto Yoshida, Yasuo Shimizu, Kentaro Kutsukake, Yasuyoshi Nagai, Noritaka Usami.

Applied Physics Express 14 [1] 011002. 2021.

https://doi.org/10.35848/1882-0786/abd0a0

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作成時刻: 2020-12-17 03:00:18 +0900 更新時刻: 2026-10-30 05:45:15 +0900

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