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Effects of thermal annealing on elimination of deep defects in amorphous In–Ga–Zn–O thin-film transistors
(Effects of Thermal Annealing on Elimination of Deep Defects in Amorphous In-Ga-Zn-O Thin-Film Transistors)

Haochun Tang, Keisuke Ide, Hidenori Hiramatsu, Shigenori Ueda, Naoki Ohashi, Hideya Kumomi, Hideo Hosono, Toshio Kamiya.
Thin Solid Films 614 73-78. 2016.
https://doi.org/10.1016/j.tsf.2016.03.005

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    作成時刻: 2016-10-26 15:32:11 +0900更新時刻: 2024-12-09 05:14:45 +0900

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