Effects of thermal annealing on elimination of deep defects in amorphous In–Ga–Zn–O thin-film transistors

Effects of thermal annealing on elimination of deep defects in amorphous In–Ga–Zn–O thin-film transistors
(Effects of Thermal Annealing on Elimination of Deep Defects in Amorphous In-Ga-Zn-O Thin-Film Transistors)

Haochun Tang, Keisuke Ide, Hidenori Hiramatsu, Shigenori Ueda, Naoki Ohashi, Hideya Kumomi, Hideo Hosono, Toshio Kamiya.

Thin Solid Films 614 73-78. 2016.

Created at: 2016-10-26 15:32:11 +0900Updated at: 2024-04-01 18:42:59 +0900