HOME > 論文 > 書誌詳細Reduction of point defect density in cubic GaN epilayers on (001) GaAs substrates using AlxGa1-xN/GaN superlattice underlayersS.F. Chichibu, M. Sugiyama, T. Nozaka, T. Suzuki, T. Onuma, K. Nakajima, T. Aoyama, M. Sumiya, T. Chikyow, A. Uedono. Journal of Crystal Growth 272 [1-4] 481-488. 2004.https://doi.org/10.1016/j.jcrysgro.2004.08.086 NIMS著者知京 豊裕Materials Data Repository (MDR)上の本文・データセット作成時刻: 2016-05-24 14:41:11 +0900更新時刻: 2024-04-02 00:21:58 +0900
