Behavior of ion-implanted As atoms in Si during molybdenum disilicide formation

T.Chikyow; H.Kawarada; K.Konuma; M.Kakumu; M.KItamua; I.Kimura; K.Yoneda; Iwao Ohdomari; Toyohiro Chikyow; Hiroshi Kawarada; Kazuo Konuma; Masakazu Kakumu; Kazuhiko Hashimoto; Itsuro Kimura; Kenji Yoneda; T.Chikyow; H.Kawarada; K.Konuma; M.Kakumu; M.KItamua; I.Kimura; K.Yoneda; Iwao Ohdomari; Toyohiro Chikyow; Hiroshi Kawarada; Kazuo Konuma; Masakazu Kakumu; Kazuhiko Hashimoto; Itsuro Kimura; Kenji Yoneda

doi:10.1063/1.336930

HOME > 論文 > 書誌詳細

Behavior of ion-implanted As atoms in Si during molybdenum disilicide formation

T.Chikyow, H.Kawarada, K.Konuma, M.Kakumu, M.KItamua, I.Kimura, K.Yoneda, Iwao Ohdomari, Toyohiro Chikyow, Hiroshi Kawarada, Kazuo Konuma, Masakazu Kakumu, Kazuhiko Hashimoto, Itsuro Kimura, Kenji Yoneda.

Journal of Applied Physics 59 [9] 3073-3076. 1986.

https://doi.org/10.1063/1.336930

NIMS著者

Materials Data Repository (MDR)上の本文・データセット

作成時刻: 2016-05-24 11:22:26 +0900更新時刻: 2025-01-11 04:52:28 +0900