Behavior of ion-implanted As atoms in Si during molybdenum disilicide formation

T.Chikyow; H.Kawarada; K.Konuma; M.Kakumu; M.KItamua; I.Kimura; K.Yoneda; Iwao Ohdomari; Toyohiro Chikyow; Hiroshi Kawarada; Kazuo Konuma; Masakazu Kakumu; Kazuhiko Hashimoto; Itsuro Kimura; Kenji Yoneda; T.Chikyow; H.Kawarada; K.Konuma; M.Kakumu; M.KItamua; I.Kimura; K.Yoneda; Iwao Ohdomari; Toyohiro Chikyow; Hiroshi Kawarada; Kazuo Konuma; Masakazu Kakumu; Kazuhiko Hashimoto; Itsuro Kimura; Kenji Yoneda

doi:10.1063/1.336930

Behavior of ion-implanted As atoms in Si during molybdenum disilicide formation

T.Chikyow, H.Kawarada, K.Konuma, M.Kakumu, M.KItamua, I.Kimura, K.Yoneda, Iwao Ohdomari, Toyohiro Chikyow, Hiroshi Kawarada, Kazuo Konuma, Masakazu Kakumu, Kazuhiko Hashimoto, Itsuro Kimura, Kenji Yoneda.

Journal of Applied Physics 59 [9] 3073-3076. 1986.

https://doi.org/10.1063/1.336930

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Created at: 2016-05-24 11:22:26 +0900 Updated at: 2026-07-29 04:48:25 +0900