HOME > 論文 > 書誌詳細Amorphous pnictide semiconductor BaZn2As2 exhibiting high hole mobilityZewen Xiao, Fan-Yong Ran, Min Liao, Shigenori Ueda, Hidenori Hiramatsu, Hideo Hosono, Toshio Kamiya. Applied Physics Letters 109 [24] 242105. 2016.https://doi.org/10.1063/1.4972039 NIMS著者上田 茂典Materials Data Repository (MDR)上の本文・データセット作成時刻: 2017-11-22 21:06:38 +0900更新時刻: 2024-12-07 05:23:14 +0900
