HOME > Article > DetailAmorphous pnictide semiconductor BaZn2As2 exhibiting high hole mobilityZewen Xiao, Fan-Yong Ran, Min Liao, Shigenori Ueda, Hidenori Hiramatsu, Hideo Hosono, Toshio Kamiya. Applied Physics Letters 109 [24] 242105. 2016.https://doi.org/10.1063/1.4972039 NIMS author(s)UEDA, ShigenoriFulltext and dataset(s) on Materials Data Repository (MDR)Created at: 2017-11-22 21:06:38 +0900Updated at: 2025-01-08 05:28:23 +0900