Electron trapping/detrapping at oxygen vacancies and imprint evolution in La-doped Hf0.5Zr0.5O2 ferroelectric capacitors probed by hard x-ray photoelectron spectroscopy | 研究者総覧SAMURAI - 物質・材料研究機構 (NIMS)

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Electron trapping/detrapping at oxygen vacancies and imprint evolution in La-doped Hf0.5Zr0.5O2 ferroelectric capacitors probed by hard x-ray photoelectron spectroscopy

W. Hamouda, Y. Yamashita, S. Ueda, S. Matzen, O. Renault, F. Mehmood, T. Mikolajick, U. Schroeder, N. Barrett.

Applied Physics Letters 127 [18] 182902. 2025.

https://doi.org/10.1063/5.0288835

Open Access AIP Publishing (Publisher) Materials Data Repository (MDR)

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MDRavailable Electron trapping/detrapping at oxygen vacancies and imprint evolution in La-doped Hf0.5Zr0.5O2 ferroelectric capacitors probed by hard x-ray photoelectron spectroscopy

作成時刻: 2025-11-13 03:11:00 +0900 更新時刻: 2026-09-23 04:35:10 +0900

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