HOME > 論文 > 書誌詳細Electronic structures of Si- and Te-doped CoSb3compounds under high pressures(高圧下でのSi, TeドープしたCoSb3の電子状態)Kazuaki Kobayashi, Atta Ullah Khan, Takao Mori. Japanese Journal of Applied Physics 56 [5S3] 05FB07. 2017.https://doi.org/10.7567/jjap.56.05fb07 NIMS著者小林 一昭森 孝雄Materials Data Repository (MDR)上の本文・データセット作成時刻: 2017-05-08 19:24:03 +0900更新時刻: 2024-04-01 23:34:48 +0900
