HOME > 論文 > 書誌詳細Consideration of the formation mechanism of an Al2O3-HfO2 eutectic film on a SiC substrateKyosuke Seya, Shunkichi Ueno, Toshiyuki Nishimura, Byung-Koog Jang. Journal of the Korean Physical Society 68 [1] 73-76. 2016.https://doi.org/10.3938/jkps.68.73 NIMS著者西村 聡之Materials Data Repository (MDR)上の本文・データセット作成時刻: 2016-05-24 17:51:14 +0900 更新時刻: 2026-09-30 04:51:52 +0900
