Structural analysis and electrical properties of pure Ge3N4 dielectric layers formed by an atmospheric-pressure nitrogen plasma

Ryoma Hayakawa; Masashi Yoshida; Kouta Ide; Yoshiyuki Yamashita; Hideki Yoshikawa; Keisuke Kobayashi; Shunsuke Kunugi; Tsuyoshi Uehara; Norifumi Fujimura

doi:10.1063/1.3638133

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Structural analysis and electrical properties of pure Ge3N4 dielectric layers formed by an atmospheric-pressure nitrogen plasma
(Structural analysis and electrical properties of pure Ge3N4 dielectric layers formed by an atmospheric-pressure nitrogen plasma)

Ryoma Hayakawa, Masashi Yoshida, Kouta Ide, Yoshiyuki Yamashita, Hideki Yoshikawa, Keisuke Kobayashi, Shunsuke Kunugi, Tsuyoshi Uehara, Norifumi Fujimura.

Journal of Applied Physics 110 [6] 064103. 2011.

https://doi.org/10.1063/1.3638133

NIMS著者

Materials Data Repository (MDR)上の本文・データセット

作成時刻: 2016-05-24 16:28:20 +0900更新時刻: 2024-03-31 15:58:33 +0900

Structural analysis and electrical properties of pure Ge3N4 dielectric layers formed by an atmospheric-pressure nitrogen plasma(Structural analysis and electrical properties of pure Ge3N4 dielectric layers formed by an atmospheric-pressure nitrogen plasma)

NIMS著者

Materials Data Repository (MDR)上の本文・データセット

Structural analysis and electrical properties of pure Ge3N4 dielectric layers formed by an atmospheric-pressure nitrogen plasma
(Structural analysis and electrical properties of pure Ge3N4 dielectric layers formed by an atmospheric-pressure nitrogen plasma)