Seisuke Nigo; Masato Kubota; Yoshitomo Harada; Taisei Hirayama; Seiichi Kato; Hideaki Kitazawa; Giyuu Kido

doi:10.1063/1.4745048

Conduction band caused by oxygen vacancies in aluminum oxide for resistance random access memory

著者	Seisuke Nigo, Masato Kubota, Yoshitomo Harada, Taisei Hirayama, Seiichi Kato, Hideaki Kitazawa, Giyuu Kido.
掲載誌名	Journal of Applied Physics 112 [3] 033711 ISSN: 00218979, 10897550 ESIでのカテゴリ: PHYSICS
出版社	AIP Publishing
発表年	2012
言語	English
DOI	https://doi.org/10.1063/1.4745048
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