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Conduction band caused by oxygen vacancies in aluminum oxide for resistance random access memory
(抵抗変化型不揮発性メモリ特性を示す酸化アルミニウムにおける酸素欠損に起因した伝導帯)

Seisuke Nigo, Masato Kubota, Yoshitomo Harada, Taisei Hirayama, Seiichi Kato, Hideaki Kitazawa, Giyuu Kido.
Journal of Applied Physics 112 [3] 033711. 2012.

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    Created at :2016-05-24 16:47:11 +0900 Updated at :2022-09-05 13:29:06 +0900

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