Electrical activity of grain boundaries in polycrystalline silicon – influences of grain boundary structure, chemistry and temperature
(多結晶Si中の粒界の電気的活性度)
NIMS著者
Materials Data Repository (MDR)上の本文・データセット
作成時刻: 2016-05-24 11:54:23 +0900更新時刻: 2024-04-02 06:11:01 +0900