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Electrical activity of grain boundaries in polycrystalline silicon – influences of grain boundary structure, chemistry and temperature
(多結晶Si中の粒界の電気的活性度)

Sadahiro Tsurekawa, Kota Kido, Shu Hamada, Tadao Watanabe, Takashi Sekiguchi.
Zeitschrift für Metallkunde 96 [2] 197-206. 2005.
https://doi.org/10.3139/146.101020

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