Electrical activity of grain boundaries in polycrystalline silicon – influences of grain boundary structure, chemistry and temperature | SAMURAI, NIMS Researchers Directory Service

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Electrical activity of grain boundaries in polycrystalline silicon – influences of grain boundary structure, chemistry and temperature
(多結晶Si中の粒界の電気的活性度)

Sadahiro Tsurekawa, Kota Kido, Shu Hamada, Tadao Watanabe, Takashi Sekiguchi.

Zeitschrift für Metallkunde 96 [2] 197-206. 2005.

https://doi.org/10.3139/146.101020

NIMS author(s)

Fulltext and dataset(s) on Materials Data Repository (MDR)

Created at: 2016-05-24 11:54:23 +0900 Updated at: 2026-10-08 07:47:02 +0900

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