Electrical activity of grain boundaries in polycrystalline silicon – influences of grain boundary structure, chemistry and temperature | 研究者総覧SAMURAI - 物質・材料研究機構 (NIMS)

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Electrical activity of grain boundaries in polycrystalline silicon – influences of grain boundary structure, chemistry and temperature
(多結晶Si中の粒界の電気的活性度)

Sadahiro Tsurekawa, Kota Kido, Shu Hamada, Tadao Watanabe, Takashi Sekiguchi.

Zeitschrift für Metallkunde 96 [2] 197-206. 2005.

https://doi.org/10.3139/146.101020

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作成時刻: 2016-05-24 11:54:23 +0900更新時刻: 2024-04-02 06:11:01 +0900

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