Analysis of Ultrahigh Apparent Mobility in Oxide Field‐Effect Transistors

Changdong Chen; Bo‐Ru Yang; Gongtan Li; Hang Zhou; Bolong Huang; Qian Wu; Runze Zhan; Yong‐Young Noh; Takeo Minari; Shengdong Zhang; Shaozhi Deng; Henning Sirringhaus; Chuan Liu

doi:10.1002/advs.201801189

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Analysis of Ultrahigh Apparent Mobility in Oxide Field‐Effect Transistors

Changdong Chen, Bo‐Ru Yang, Gongtan Li, Hang Zhou, Bolong Huang, Qian Wu, Runze Zhan, Yong‐Young Noh, Takeo Minari, Shengdong Zhang, Shaozhi Deng, Henning Sirringhaus, Chuan Liu.

Advanced Science 6 [7] 1801189. 2019.

https://doi.org/10.1002/advs.201801189

Open Access Wiley (Publisher)

NIMS著者

三成剛生

Materials Data Repository (MDR)上の本文・データセット

作成時刻: 2019-08-08 03:11:56 +0900更新時刻: 2024-03-31 01:24:57 +0900