Contact Geometry Selection in the Formation Process of a Single-Molecule Junction Elucidated by Surface-Enhanced Raman Scattering Spectroscopy and <i>I–V</i> Measurements: Deliberate Control of Molecule–Electrode Interface for Molecular Electronics | 研究者総覧SAMURAI - 物質・材料研究機構 (NIMS)

HOME > 論文 > 書誌詳細

Contact Geometry Selection in the Formation Process of a Single-Molecule Junction Elucidated by Surface-Enhanced Raman Scattering Spectroscopy and I–V Measurements: Deliberate Control of Molecule–Electrode Interface for Molecular Electronics

Moe Ichikawa, Kazuhito Tsukagoshi, Tomoaki Nishino, Satoshi Kaneko.

ACS Applied Nano Materials 8 [27] 13620-13627. 2025.

https://doi.org/10.1021/acsanm.5c00616

Open Access Materials Data Repository (MDR)

NIMS著者

塚越一仁

Materials Data Repository (MDR)上の本文・データセット

MDRavailable Contact Geometry Selection in the Formation Process of a Single-Molecule Junction Elucidated by Surface-Enhanced Raman Scattering Spectroscopy and <i>I–V</i> Measurements: Deliberate Control of Molecule–Electrode Interface for Molecular Electronics

作成時刻: 2025-07-17 03:07:36 +0900 更新時刻: 2026-10-01 06:26:12 +0900

▲ページトップへ移動