- NIMS Junior Researcher, Nanostructured Semiconducting Materials Group, Semiconductor Materials Field, Research Center for Materials Nanoarchitectonics (MANA)
- Trainee, Nanostructured Semiconducting Materials Group, Semiconductor Materials Field, Research Center for Materials Nanoarchitectonics (MANA)
- GOTO.Yuta@nims.go.jp
- Address
- 305-0044 1-1 Namiki Tsukuba Ibaraki JAPAN [Access]
Research
PublicationsNIMS affiliated publications since 2004.
Presentations
- GOTO, Yuta, MATSUMURA, Ryo, FUKATA, Naoki. Scan Speed Effect on The Laser Induced Crystallization of Ge Film on Quartz. HQSN2025 & HQMST2025 (International Conference on Hybrid Quantum Systems and Nanotechnologies 2025 and International Workshop on Hybrid Quantum Materials, Sciences, and Technologies 2025). 2025
- 後藤 雄太, 松村 亮, 深田 直樹. CWレーザーアニールによる石英上Geのキャリア移動度向上. 第16回 半導体材料・デバイスフォーラム (SMDF 2025). 2025
- GOTO, Yuta, MATSUMURA, Ryo, FUKATA, Naoki. Optimized high-speed CW Laser Annealing for High and Dopant Activation and Mobility in Sb-Doped Ge Films on Quartz. SSDM 2025 (International Conference on Solid State Devices and Materials). 2025
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この機能は所内限定です。