HOME > Presentation > Detail
GaAs(113)表面上でのメソスコピックコラゲーション形成－MBEとMOVPE法の比較
(Formation of Mesoscopic Corrugation on GaAs (113) Surfaces - Molecular Beam Epitaxy versus Metal-Organic Vapour Phase Epitaxy)
第62回応用物理学会学術講演会. September 11, 2001-September 14, 2001.
NIMS author(s)
Fulltext and dataset(s) on Materials Data Repository (MDR)
Created at: 2017-02-18 02:20:23 +0900 Updated at: 2018-05-21 18:44:12 +0900