HOME > Presentation > Detail
化合物半導体での原子空孔による格子緩和2.
(Lattice Relaxation due to Vacancy in Compound Semicondnctors.)
日本物理学会. 1990-04-01.
NIMS author(s)
Fulltext and dataset(s) on Materials Data Repository (MDR)
Created at: 2017-02-18 00:18:16 +0900 Updated at: 2017-07-10 17:09:52 +0900