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固相エピタキシー法による Si(111)基板上の極薄 GeSn-pMOSFETs
(Ultra-thin GeSn pMOSFETs on Si (111) by solid phase epitaxy)

Tatsuro Maeda, ジェバスワン ウイパコーン, Hiroyuki Hattori, Noriyuki Uchida, Shu Miura, Masatoshi Tanaka, J. -P. Locquet, R. R. Lieten.
The 61st JSAP Spring Meeting 2014. 2014.

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Fulltext and dataset(s) on Materials Data Repository (MDR)

    Created at: 2017-02-14 11:01:24 +0900Updated at: 2017-07-10 22:05:11 +0900

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