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Positive field and Temperature dependencies of critical current density in vanakium3-gallium and niobium3-aluminium
(V3GaとNb3Alにおける臨界電流密度の正の磁場依存性と温度依存性)
１９９９年度国際低温材料会議. July 12, 1999-July 16, 1999.
NIMS author(s)
Fulltext and dataset(s) on Materials Data Repository (MDR)
Created at: 2017-02-18 01:42:00 +0900 Updated at: 2023-04-09 15:12:03 +0900