HOME > Presentation > Detail絶縁体基板上へのエピタキシャルβFeSi2薄膜の合成とその基礎特性(Growth of βFeSi2 thin films on insulator substrates and their basic property)木村武, 秋山賢輔, 大橋 直樹, 舟窪浩. 第41回セラミックス基礎科学討論会. January 22, 2003-January 23, 2003.NIMS author(s)OHASHI, NaokiFulltext and dataset(s) on Materials Data Repository (MDR)Created at: 2017-02-18 03:07:43 +0900 Updated at: 2017-07-10 18:39:06 +0900