液滴エピタキシィ法により作製したGaAs量子ドットの構造評価

液滴エピタキシィ法により作製したGaAs量子ドットの構造評価
(Structure of GaAs quantum dots fabricated by Droplet Epitaxy with high As Flux irradiation)

Katsuyuki Watanabe, T.Mano, S.Tsukamoto, N.Koguchi, C.D.Lee, S.Y.Leem, H.J.Lee, S.K.Noh, Katsuyuki Watanabe, T.Mano, S.Tsukamoto, N.Koguchi, C.D.Lee, S.Y.Leem, H.J.Lee, S.K.Noh.

International Conference on Advanced Materials & Devices'99(ICAM. October 06, 1999-October 08, 1999.

NIMS author(s)

Fulltext and dataset(s) on Materials Data Repository (MDR)

Created at: 2017-02-18 01:44:02 +0900 Updated at: 2017-07-10 17:56:59 +0900

液滴エピタキシィ法により作製したGaAs量子ドットの構造評価(Structure of GaAs quantum dots fabricated by Droplet Epitaxy with high As Flux irradiation)

NIMS author(s)

Fulltext and dataset(s) on Materials Data Repository (MDR)

液滴エピタキシィ法により作製したGaAs量子ドットの構造評価
(Structure of GaAs quantum dots fabricated by Droplet Epitaxy with high As Flux irradiation)