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HDE法により作製したInGaAs量子ドットのPL特性の成長条件依存性
(Dependence of PL properties of InGaAs quantum dots by HDE method on growth conditions)
第４８回応用物理学関係連合講演会. March 28, 2001-March 31, 2001.
NIMS author(s)
Fulltext and dataset(s) on Materials Data Repository (MDR)
Created at: 2017-01-08 04:57:15 +0900 Updated at: 2017-07-10 18:12:35 +0900