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Atomic-level in-situ Real-space observation of Ga adatoms on GaAs(001)(2×4)-As surface during Molecular beam Epitaxy growth
(分子線エピタキシィ成長中のGaAs(001)(2×4)-As表面上Gaの吸着原子の原子レベルその実空間観察)
MBX-X. August 31, 1998-September 04, 1998.
NIMS author(s)
Fulltext and dataset(s) on Materials Data Repository (MDR)
Created at: 2017-02-18 01:31:18 +0900 Updated at: 2017-07-10 17:50:00 +0900