HOME > Presentation > DetailElectronic structures of the temperature-induced valence transition system EuNi2(Si1-xGex)2市木勝也, 三村功次郎, 安斎太陽, 魚住孝幸, 佐藤仁, 内海有希, 上田 茂典, 光田暁弘, 和田祐文, 田口幸広, 島田賢也, 生天目博文, 谷口雅樹. HAXPES 2015. March 30, 2015-April 03, 2015.NIMS author(s)UEDA, ShigenoriFulltext and dataset(s) on Materials Data Repository (MDR)Created at: 2017-02-14 11:01:00 +0900Updated at: 2017-07-10 22:05:07 +0900